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Product Details:
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| Product Name: | Silicon Carbide Elements | Condition: | New |
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| Material: | Silicon Carbide (SiC) | Shape: | Rod Shaped |
| Power Source: | Electric | Working Temperature: | Up To 1450℃ |
| Application: | Ceramic | Power: | 1000w-62000w |
| High Light: | 1000w Silicon Carbide Elements,1000w Silicon Carbide Element Rod,1000w SiC Ceramic Element Rod |
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Gun Type Silicon Carbide Electric Heating Element 1450 ℃
Silicon Carbide Elements General Description
The Silicon Carbide Elements is a rod-shaped non-metallic thermoelectric element which is made of high quality green SiC as the main raw material through processing, high temperature silicification and recrystallization. Compared with metallic electric heating elements, this element has the characteristics of high operating temperature, oxidation resistance, corrosion resistance, long service life, small deformation, convenient installation and maintenance.
Silicon carbide Heating element sic heaters rod is our main product.Mission can supply high quality Silicon Carbide (SiC) heating elements.
Silicon Carbide Elements specifications and dimension mark
Outside diameter (OD) :mm
Length of hot zone (HZ) :mm
Length of cold zone (CZ) :mm
Length of overall(OL):mm
Center distance (A) :mm
Resistance (at 1050℃+/-50℃) :Ω
Types of SiC Heating Elements:
1. SW (Standard)
SW Silicon Carbides are used in applications ranging in temperature from 600°C up to 1400°C in both air and controlled atmospheres. Although the type of atmosphere used will determine the maximum recommended element temperature. This kind of silicon carbide elements can be mounted either vertically or horizontally.
2. U-TYPE
U shape Silicon Carbide is consists of two silicon carbide rod with same diameter. Each rod has both hot zone and cold end with identical resistance. Two rods are connected by the low resistance SiC. Also the connector could be used as holder according to different requirements.
3. W-TYPE
3-phase elements are available in 2 different types: SGC (Dumbbell), SGD(Standard).
These elements are self-bonded silicon carbide formed by re-crystallization of silicon carbide at high temperature. It consists of three high-purity silicon carbide rods connected at one end by a silicon carbide crossbar. SGC elements are designed for vertical installation in standard float glass bathes and SGD elements for horizontal installation. They can be connected directly on three-phase power supply and is a one-side terminal type which permits drawing out the terminals from the roof of the furnace.
4. Single Spiral Silicon Carbide and Double Spiral Silicon Carbide:
They are made from silicon Carbide powder, and have two shapes: single and double sprial silicon carbide heating element. They are widely used in all kinds of kilns and furnaces.
Normally the following should be given when describing any type of SiC heating elements:
Type: ED, U, W, SC, SCR, DB,G, H, or DM
Outside Diameter (OD) : mm
Length of Hot Zone (HZ) :mm
Length of Cold Zone (CZ) :mm
Length of Overall(OL):mm
Center Distance (A) :mm
Resistance (at 1050℃+/-50℃) :Ω
Physical property of SIC heating element
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specific gravity |
2.6~2.8g/cm³ |
bend strength |
>300kg |
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hardness |
>9MOH’S |
tensile strength |
>150kg/cm³ |
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porosity rate |
<30% |
radiance |
0.85 |
Recommended surface load and Influences to Surfaces of the Elements in Different Operating TemperatureS
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atmosphere |
Furnace Temperature(°C) |
Surface Load(W/cm2) |
The influence on the Rod |
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Ammonia |
1290 |
3.8 |
The action on SiC produces methane and destroys the protection film of SiO2 |
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Carbon dioxide |
1450 |
3.1 |
Corrode SiC |
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Carbon monoxide |
1370 |
3.8 |
Absorb carbon powder and influence the protection film of SiO2 |
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Halogen |
704 |
3.8 |
Corrode SiC and destroy the protection film of SiO2 |
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Hydrogen |
1290 |
3.1 |
The action on SiC produces methane and destroys the protection film of SiO2 |
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Nitrogen |
1370 |
3.1 |
The action on SiC produces insulating layer of silicon nitride |
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Sodium |
1310 |
3.8 |
Corrode SiC |
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silicon dioxide |
1310 |
3.8 |
Corrode SiC |
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Oxygen |
1310 |
3.8 |
SiC oxidized |
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Water-vapor |
1090-1370 |
3.1-3.6 |
The action on SiC produces hydrate of silicon |
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Hydrocarbon |
1370 |
3.1 |
Absorb carbon powder resulted in Hot pollution |
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Contact Person: chen
Tel: +8615903677007
